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| SMD Type Silicon PNP Epitaxial Planar Type 2SB967 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Possible to solder the radiation fin directly to printed cicuit board. Low collector-emitter saturation voltage VCE(sat). +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Large collector current IC. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -27 -18 -7 -5 -8 20 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base cutoff curent Emitter-base cutoff current Collector-emitter voltage Emitter-base voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCEO VEBO hFE Testconditons VCB = -10 V,IE = 0 VEB = -5 V, IC = 0 IC = -1mA, IB = 0 IE = -10 iA, IC = 0 VCE = -2 V, IC = 2 A -18 -7 90 625 -1 120 85 V MHz pF Min Typ Max -100 -1 Unit nA iA V V VCE(sat) IC = -3 A, IB = -0.1 A fT Cob VCE = -6 V, IE = -50 mA , f = 200 MHz VCB = -20V , IE = 0 , f = 1.0MHz hFE Classification Rank hFE P 90 135 Q 125 205 R 180 625 3.80 www.kexin.com.cn 1 |
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